PRD1027 - 2,000A Wet Thermal Oxide/2,000A Std LPCVD Nitride

• -Material Silicon
• -Diameter 100mm
• -Type/Dopant P/Boron
• -Orientation <100>
• -Resistivity >1 ohm-cm
• -Thickness - W 525+/-25um
• -Surface Prep SSP
• -Flat/Notch Flat, Semi Standard
• -Film Type Wet Thermal Oxide
• -Film Thickness 2,000A +/-5%
• -Film Type Stoichiometric LPCVD Nitride
• -Film Stress ≥800 MPa Tensile
• -Film Thickness 2,000A +/-5%
• -Sides Processed Both
• -Quantity 1 lot = 25 wafers

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