PRD1019 - 1,000A Stoichiometric LPCVD Nitride
| -Material: Silicon |
| -Diameter: 100mm |
| -Type/Dopant: P/Boron |
| -Orientation: <100> |
| -Resistivity: >1 ohm-cm |
| -Thickness - W: 525+/-25um |
| -Surface Prep: SSP |
| -Flat/Notch: Flat, Semi Standard |
| -Film Type: Stoichiometric LPCVD Nitride |
| -Film Stress: ≥800 MPa Tensile |
| -Film Thickness: 1,000A +/-5% |
| -Sides Processed: Both |
| -Quantity: 1 lot = 25 wafers |